مشخصات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
ویژگی FET:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
دمای کار:
-55 درجه سانتی گراد ~ 150 درجه سانتی گراد (TJ)
Package / Case:
SOT-227-4, miniBLOC
شارژ گیت (Qg) (حداکثر) @ Vgs:
425 nC @ 10 V
Rds On (Max) @ Id, Vgs:
33mOhm @ 55A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
17000 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Ultra X
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Power Dissipation (Max):
1170W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN110
مقدمه
کانال N 850 V 110A (Tc) 1170W (Tc) شاسی نصب SOT-227B
Related Products

IXFK120N20
MOSFET N-CH 200V 120A TO-264AA

IXFK27N80
MOSFET N-CH 800V 27A TO264AA

IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD

IXFH15N80
MOSFET N-CH 800V 15A TO247AD

IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD

IXFH12N90
MOSFET N-CH 900V 12A TO247AD

IXFH13N50
MOSFET N-CH 500V 13A TO247AD

IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B

IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B

IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
تصویر | قسمت # | توضیحات | |
---|---|---|---|
![]() |
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
![]() |
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
![]() |
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
![]() |
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
![]() |
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
![]() |
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
![]() |
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
![]() |
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
![]() |
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
![]() |
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
ارسال RFQ
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