IRF9510PBF
سازنده:
ویشای سیلیکونیکس
توضیحات:
MOSFET P-CH 100V 4A TO220AB
دسته بندی:
محصولات نیمه هادی گسسته
مشخصات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
شارژ گیت (Qg) (حداکثر) @ Vgs:
8.7 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.4A, 10V
نوع FET:
کانال پی
Drive Voltage (Max Rds On, Min Rds On):
10V
بسته بندی:
لوله
Drain to Source Voltage (Vdss):
100 V
Vgs (حداکثر):
± 20 ولت
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
43W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9510
مقدمه
کانال P 100 V 4A (Tc) 43W (Tc) از طریق سوراخ TO-220AB
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| تصویر | قسمت # | توضیحات | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
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|
|
|
SIR872ADP-T1-RE3 |
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SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
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|
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|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
SUD50N04-8M8P-4GE3 |
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|
|
|
|
SISA72DN-T1-GE3 |
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|
ارسال RFQ
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