IRF9Z34SPBF
مشخصات
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 11A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (حداکثر):
± 20 ولت
Product Status:
Active
ظرفیت ورودی (Ciss) (حداکثر) @ Vds:
1100 pF @ 25 V
Mounting Type:
Surface Mount
سری:
-
Supplier Device Package:
D²PAK (TO-263)
مفر:
ویشای سیلیکونیکس
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Power Dissipation (Max):
3.7W (Ta), 88W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9Z34
مقدمه
P-Channel 60 V 18A (Tc) 3.7W (Ta) ، 88W (Tc) سطح نصب D2PAK (TO-263)
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SI7157DP-T1-GE3 |
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IRFP21N60LPBF |
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SIR880ADP-T1-GE3 |
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SIR873DP-T1-GE3 |
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SIJ478DP-T1-GE3 |
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SUD50N04-8M8P-4GE3 |
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ارسال RFQ
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