پیام فرستادن

SI2304DDS-T1-GE3

سازنده:
ویشای سیلیکونیکس
توضیحات:
MOSFET N-CH 30V 3.3A/3.6A SOT23
دسته بندی:
محصولات نیمه هادی گسسته
مشخصات
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
6.7 nC @ 10 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
235 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
3.3A (Ta), 3.6A (Tc)
Power Dissipation (Max):
1.1W (Ta), 1.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2304
مقدمه
کانال N 30 V 3.3A (Ta) ، 3.6A (Tc) 1.1W (Ta) ، 1.7W (Tc) سطح نصب SOT-23-3 (TO-236)
ارسال RFQ
ذخایر:
مقدار تولیدی: