FMY-1106S
مشخصات
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Obsolete
Current - Reverse Leakage @ Vr:
30 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.15 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220F-2L
Reverse Recovery Time (trr):
200 ns
مفر:
سانکن الکتریک آمریکا شرکت
Technology:
Standard
دمای عملیاتی - اتصال:
-40 درجه سانتی گراد ~ 150 درجه سانتی گراد
Package / Case:
TO-220-2 Full Pack
ولتاژ - معکوس DC (Vr) (حداکثر):
600 V
Current - Average Rectified (Io):
10A
سرعت:
بازیابی سریع =< 500ns، > 200mA (Io)
مقدمه
دیود 600 V 10A از طریق سوراخ TO-220F-2L
محصولات مرتبط

SJPB-H9VL
DIODE SCHOTTKY 90V 2A SJP

SJPL-H2VL
DIODE GEN PURP 200V 2A SJP

SJPB-H6VR
DIODE SCHOTTKY 60V 2A SJP

FMD-G26S
DIODE GEN PURP 600V 10A TO220F

SARS01V1
DIODE GEN PURP 800V 1.2A AXIAL

SJPX-F2VR
DIODE GEN PURP 200V 1.5A SJP

SARS05VL
DIODE GEN PURP 800V 1A SMD
تصویر | قسمت # | توضیحات | |
---|---|---|---|
![]() |
SJPB-H9VL |
DIODE SCHOTTKY 90V 2A SJP
|
|
![]() |
SJPL-H2VL |
DIODE GEN PURP 200V 2A SJP
|
|
![]() |
SJPB-H6VR |
DIODE SCHOTTKY 60V 2A SJP
|
|
![]() |
FMD-G26S |
DIODE GEN PURP 600V 10A TO220F
|
|
![]() |
SARS01V1 |
DIODE GEN PURP 800V 1.2A AXIAL
|
|
![]() |
SJPX-F2VR |
DIODE GEN PURP 200V 1.5A SJP
|
|
![]() |
SARS05VL |
DIODE GEN PURP 800V 1A SMD
|
ارسال RFQ
ذخایر:
مقدار تولیدی: